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| FGH50N3 July 2002 FGH50N3 300V, PT N-Channel IGBT General Description The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485 Features * Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max * Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200J * SCWT (@ TJ = 125C). . . . . . . . . . . . . . . . . > 8s * 300V Switching SOA Capability * Positive VCE(SAT) Temperature Coefficient above 50A Package E C G Symbol C TO-247 COLLECTOR (FLANGE) G E Device Maximum Ratings TC= 25C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS EARV PD TJ TSTG tSC Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V Single Pulse Reverse Avalanche Energy, IEC = 30A, L = 1.78mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Short Circuit Withstand Time (Note 2) Ratings 300 75 75 240 20 30 150A at 300V 800 800 463 3.7 -55 to 150 -55 to 150 8 mJ mJ W W/C C C s Units V A A A V V CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 180V, TJ = 125C, VGE = 12Vdc, RG = 5 (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A FGH50N3 Package Marking and Ordering Information Device Marking FGH50N3 Device FGH50N3 Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES BVECS ICES IGES Collector to Emitter Breakdown Voltage ICE = 250A, VGE = 0V Emitter to Collector Breakdown Voltage IEC = 10mA, VGE = 0V Collector to Emitter Leakage Current Gate to Emitter Leakage Current VCE = 300V VGE = 20V TJ = 25C TJ = 125C 300V 15V 250 2.0 250 V V A mA nA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE= 30A VGE = 15V TJ = 25C TJ = 125C 1.30 1.25 1.4 1.4 V V Dynamic Characteristics QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage ICE = 30A VCE = 150V VGE = 15V VGE = 20V 4.0 180 228 4.8 7.0 5.5 nC nC V V ICE = 250A, VCE = VGE ICE = 30A, VCE = 150V Switching Characteristics SSOA Switching SOA TJ = 150C, RG = 5, VGE = 15V , L = 25H, Vce = 300V IGBT and Diode at TJ = 25C, ICE = 30A, VCE = 180V, VGE = 15V, RG = 5, L = 100H, Test Circuit - Figure 20 IGBT and Diode at TJ = 125C, ICE = 30A, VCE = 180V, VGE = 15V, RG = 5, L = 100H, Test Circuit - Figure 20 150 A td(ON)I trI td(OFF)I tfI EON2 EOFF td(ON)I trI td(OFF)I tfI EON2 EOFF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 1) Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 1) Turn-Off Energy (Note 2) - 20 15 135 12 130 92 19 13 155 7 225 135 120 190 15 270 200 ns ns ns ns J J ns ns ns ns J J Thermal Characteristics RJC NOTE: 1. Thermal Resistance Junction-Case TO-247 - - 0.27 C/W EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20. 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A FGH50N3 Typical Performance Curves TJ = 25C unless otherwise noted 200 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V ICE , DC COLLECTOR CURRENT (A) 160 175 TJ = 150oC, RG = 5, VGE = 15V, L = 25H 150 125 100 75 50 25 0 25 50 75 100 (oC) 125 150 0 50 100 150 200 250 300 350 120 80 PACKAGE LIMITED 40 0 TC , CASE TEMPERATURE VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. DC Collector Current vs Case Temperature 500 fMAX, OPERATING FREQUENCY (kHz) 400 300 VGE = 15V 200 VGE = 10V TJ = 125oC, RG = 5, L = 100H, V CE = 180V TC = 75oC Figure 2. Minimum Switching Safe Operating Area 30 tSC , SHORT CIRCUIT WITHSTAND TIME (s) 25 tSC ISC 700 20 600 15 500 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.27oC/W, SEE NOTES 60 2 10 20 100 10 400 5 300 0 9 10 11 12 13 14 15 16 200 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Emitter Current 60 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250s 50 Figure 4. Short Circuit Withstand Time 60 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 50 40 40 30 TJ = 25oC 20 TJ = 150oC 10 TJ = 125oC 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 30 TJ = 25oC 20 TJ = 150oC 10 TJ = 125oC 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A ISC, PEAK SHORT CIRCUIT CURRENT (A) VCE = 180V, RG = 5 TJ = 125oC , 800 FGH50N3 Typical Performance Curves TJ = 25C unless otherwise noted (Continued) 1.4 RG = 5 L = 100H, VCE = 180V , EON2 , TURN-ON ENERGY LOSS (mJ) EOFF TURN-OFF ENERGY LOSS (J) 1.2 1.0 TJ = 25oC, TJ = 125oC, VGE = 10V 0.8 0.6 0.4 0.2 0 0 10 20 TJ = 25oC, TJ = 125oC, VGE = 15V 0 30 40 50 60 0 10 20 30 40 50 60 350 300 250 TJ = 125oC, VGE = 10V, VGE = 15V 200 150 100 50 TJ = 25oC, VGE = 10V, VGE = 15V 400 RG = 5 L = 100H, VCE = 180V , ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 7. Turn-On Energy Loss vs Collector to Emitter Current 35 RG = 5 L = 100H, VCE = 180V , td(ON)I, TURN-ON DELAY TIME (ns) Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 100 RG = 5 L = 100H, VCE = 180V , 80 30 trI , RISE TIME (ns) TJ = 25oC, TJ = 125oC, VGE = 10V 25 60 TJ = 25oC, TJ = 125oC, VGE = 10V 40 20 20 TJ = 25oC, TJ = 125oC, VGE = 15V 15 0 10 20 30 40 50 60 0 0 10 20 TJ = 25oC, TJ = 125oC, VGE =15V 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. Turn-On Delay Time vs Collector to Emitter Current 170 RG = 5 L = 100H, VCE = 180V , td(OFF)I , TURN-OFF DELAY TIME (ns) 160 150 TJ = 25oC, TJ = 125oC, VGE = 15V 140 130 120 110 TJ = 25oC, TJ = 125oC, VGE = 10V 100 0 10 20 30 40 50 60 Figure 10. Turn-On Rise Time vs Collector to Emitter Current 24 RG = 5 L = 100H, VCE = 180V , 20 tfI , FALL TIME (ns) 16 TJ = 25oC, VGE = 10V, 15V 12 8 TJ = 125oC, VGE = 10V, 15V 4 0 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 11. Turn-Off Delay Time vs Collector to Emitter Current Figure 12. Fall Time vs Collector to Emitter Current (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A FGH50N3 Typical Performance Curves TJ = 25C unless otherwise noted (Continued) 250 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s 200 16 IG(REF) = 1mA, RL = 5, TJ = 25oC 14 12 VCE = 300V 10 8 6 4 VCE = 100V 2 0 5 6 7 8 9 10 11 0 25 50 75 100 125 150 175 200 VGE, GATE TO EMITTER VOLTAGE (V) VCE = 200V 150 100 TJ = 25oC 50 TJ = 125oC 0 TJ = -55oC QG , GATE CHARGE (nC) Figure 13. Transfer Characteristic ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) RG = 5, L = 100H, VCE = 180V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 60A 0.8 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 1.2 40 Figure 14. Gate Charge TJ = 125oC, L = 100H, VCE = 180V, VGE = 15V ETOTAL = EON2 + EOFF 10 1.0 0.6 ICE = 30A 0.4 ICE = 15A ICE = 60A 1 ICE = 30A ICE = 15A 0.1 1 10 100 1000 0.2 0 25 50 75 100 o 125 150 TC , CASE TEMPERATURE ( C) RG, GATE RESISTANCE () Figure 15. Total Switching Loss vs Case Temperature 10 FREQUENCY = 1MHz VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 16. Total Switching Loss vs Gate Resistance 3.5 DUTY CYCLE < 0.5% PULSE DURATION = 250s, TJ = 25oC 3.0 ICE = 60A 2.5 ICE = 30A 2.0 ICE = 15A 1.5 C, CAPACITANCE (nF) CIES COES 1.0 CRES 0.1 0.05 0 10 20 30 40 50 60 70 80 90 100 1.0 6 7 8 9 10 11 12 13 14 15 16 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 17. Capacitance vs Collector to Emitter Voltage Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A FGH50N3 Typical Performance Curves TJ = 25C unless otherwise noted (Continued) ZJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t1 t1 , RECTANGULAR PULSE DURATION (s) Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms FFH30US30S DIODE 49449 90% VGE L = 100H VCE RG = 5 + FGH50N3 90% ICE VDD = 180V 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - Figure 20. Inductive Switching Test Circuit Figure 21. Switching Test Waveforms (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A FGH50N3 Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0) ECCOSORBD is a Trademark of Emerson and Cumming, Inc. (c)2002 Fairchild Semiconductor Corporation FGH50N3 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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